Simon Sze

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Gender	Male
Age	88
Date of birth	March 21,1936
Zodiac sign	Aries
Born	Nanjing
	China
Education	National Taiwan University
	Stanford University
Date of Reg.	2019-10-01 03:09:59
Date of Upd.	2023-06-07 11:52:08
ID	1343276

Semiconductor Devices: Physics and Technology
Fundamentals of Semiconductor Fabrication
Semiconductor Physics
SEMICONDUCTOR DEVICES: PHYSICS AND TECHNOLOGY, 2ND ED
Soviet Applied Research in Microelectronics: The Institute of Semiconductor Physics, Siberian Department, USSR Academy of Sciences
Solutions Manual to Accompany Semiconductor Device S
Wie Semiconductor Devices: Physics and Technology, Second Edition, International Edition
Selected Solutions for Semiconductor Devices: Physics and Technology
Chemical Transformations of Vinylidenecyclopropanes
(WCS)Semiconductor W/ Study Tips Set
Organocatalytic Cycloadditions for Synthesis of Carbo- and Heterocycles
The Chemistry of the Morita-Baylis-Hillman Reaction
PHYSICS OF SEMICONDUCTOR DEVICES, 3RD ED
Physics of Semiconductor Devices

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Simon Sze Life story

Simon Min Sze, or Shi Min, is a Chinese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.